summary v (br)dss = 30v; r ds(on) = 0.12 i d = 2.0a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23 package applications ? dc - dc converters ? power management functions ? motor control device marking ? 7n3 zxmn3a01f issue 2 - july 2002 1 30v n-channel enhancement mode mosfet device reel size tape width quantity per reel ZXMN3A01FTA 7? 8mm 3000 units zxmn3a01ftc 13? 8mm 10000 units ordering information top view pinout sot23
zxmn3a01f issue 2 - july 2002 2 parameter symbol v alue unit junction to ambient (a) r ja 200 c/w junction to ambient (b) r ja 155 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. thermal resistance parameter symbol limit unit drain-source voltage v dss 30 v gate source voltage v gs 20 v continuous drain current v gs =10v; t a =25c (b) v gs =10v; t a =70c (b) v gs =10v; t a =25c (a) i d 2.0 1.6 1.8 a pulsed drain current (c) i dm 8a continuous source current (body diode) (b) i s 1.3 a pulsed source current (body diode) (c) i sm 8a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings.
zxmn3a01f issue 2 - july 2002 3 100m 1 10 10m 100m 1 10 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area i d drain current (a) v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 50 100 150 200 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w) characteristics
zxmn3a01f issue 2 - july 2002 4 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 30 v i d =250 a, v gs =0v zero gate voltage drain current i dss 0.5 a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.106 0.12 0.18 ? ? v gs =10v, i d =2.5a v gs =4.5v, i d =2.0a forward transconductance (1)(3) g fs 3.5 s v ds =4.5v,i d =2.5a dynamic (3) input capacitance c iss 190 pf v ds =25v,v gs =0v, f=1mhz output capacitance c oss 38 pf reverse transfer capacitance c rss 20 pf switching (2) (3) turn-on delay time t d(on) 1.7 ns v dd =15v, i d =2.5a r g @ 6.0 ? ,v gs =10v rise time t r 2.3 ns turn-off delay time t d(off) 6.6 ns fall time t f 2.9 ns gate charge q g 2.3 nc v ds =15v,v gs =5v, i d =2.5a total gate charge q g 3.9 nc v ds =15v,v gs =10v, i d =2.5a gate-source charge q gs 0.6 nc gate-drain charge q gd 0.9 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =1.7a, v gs =0v reverse recovery time (3) t rr 17.7 ns t j =25c, i f =2.5a, di/dt= 100a/ s reverse recovery charge (3) q rr 13.0 nc electrical characteristics (at t a = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width = 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
zxmn3a01f issue 2 - july 2002 5 0.1 1 10 0.1 1 10 0.1 1 10 0.1 1 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.1 1 10 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.1 1 0.4 0.6 0.8 1.0 1.2 0.1 1 10 5v 7v 4.5v 3.5v 2.5v 4v output characteristics t = 25c 3v v gs 10v i d drain current (a) v ds drain-source voltage (v) 5v 2v 2.5v 4.5v 7v 10v 4v 3v output characteristics t = 150c v gs 3.5v i d drain current (a) v ds drain-source voltage (v) typical transfer characteristics v ds =10v t = 25c t = 150c i d drain current (a) v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = 10v i d =2.5a v gs(th) v gs =v ds i d = 250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 4.5v 7v 5v 4v 10v 3.5v 2.5v on-resistance v drain current t=25c 3v v gs r ds(on) drain-source on-resistance ( w ) i d drain current (a) t = 150c t=25c source-drain diode forward voltage v sd source-drain voltage (v) i sd reverse drain current (a) typical characteristics
zxmn3a01f issue 2 - july 2002 6 0.1 1 10 0 50 100 150 200 250 300 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) v ds -drain-sourcevoltage(v) 01234 0 2 4 6 8 10 i d =2.5a v ds = 15v gate-sourcevoltagevgatecharge capacitance v drain-source voltage q - charge (nc) v gs gate-source voltage (v) typical characteristics basic gate charge waveform gate charge test circuit switching time waveforms switching time test circuit
controlling dimensions in millimetres approx conversions inches. zxmn3a01f issue 2 - july 2002 7 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4422 fax: (44) 161 622 4420 uk.sales@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny11788 usa telephone: (631) 360 2222 fax: (631) 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza, tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2002 dim millimetres inches dim millimetres inches min max min max min max min max a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c 1.10 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom 10 typ 10 typ package dimensions package outline pad layout
|
